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| DATA SHEET SILICON TRANSISTOR ARRAY PA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The PA1458 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES * Surge Absorber (C - B) built in. * Easy mount by 0.1 inch of terminal interval. * High hFE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 10 1.4 0.6 0.1 2.54 1.4 0.5 0.1 PA1458H 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Surge Sustaining Energy Collector Current (DC) Collector Current (pulse) Collector Current Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO ECEO(sus) IC(DC) ICBS(DC) IB(DC) PT1** PT2*** Tj 60 10 60 10 7 25 5 5 0.5 3.5 28 150 V V V mJ/unit A/unit A/unit mA/unit A/unit W W C (B) (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 . R1 = 3.0 k . . R2 = 300 . IC(pulse)* 10 (E) Tstg -55 to +150 C * PW 300 s, Duty Cycle 10 % ** 4 Circuits, Ta = 25 C *** 4 Circuits, Tc = 25 C The information in this document is subject to change without notice. Document No. IC-3523 (O. D. No. IC-6342) Date Published September 1994 P Printed in Japan (c) 10 MIN. 2.5 1994 PA1458 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current Collector to Emitter Sustaining Voltage DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICES IEBO VCEO(sus) 50 60 MIN. TYP. MAX. 10 10 70 UNIT TEST CONDITIONS VCE = 40 V VEB = 5 V, IC = 0 IC = 3 A, L = 1 mH A mA V hFE1 hFE2 * * 2000 500 7000 3000 0.9 1.6 1 7 2 20000 -- -- VCE = 2 V, IC = 2 A VCE = 2 V, IC = 4 A IC = 2 A, IB = 2 mA IC = 2 A, IB = 2 mA IC = 2 A IB1 = -IB2 = 2 mA . . VCC = 40 V, RL = 20 . . See test circuit VCE(sat) * VBE(sat) * ton tstg tf 1.5 2 V V s s s * PW 350 s, Duty Cycle 2 % / pulsed SWITCHING TIME TEST CIRCUIT . RL = 20 . VIN IC IB1 IB2 PW . PW = 50 s . Duty Cycle 2 % T.U.T. . VCC = 40 V . Collector Current Wave Form ton Base Current Wave Form IB1 IB2 90 % IC 10 % tstg tf . VBB = -5 V . 2 PA1458 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING CURVE OF SAFE OPERATING AREA 10 PW SAFE OPERATING AREA dT - Percentage of Rated Current - % = 100 IC - Collector Current - A 80 60 40 20 5 30 S/ 2 1 0.5 D Li issi m pa ite ti d on 10 ms ted 0 i 5 im bL S/ 0 s s 1m s 3 m ms bL im ite 0.2 Single Pulse 0.1 0 50 100 150 TC - Case Temperature - C 1 20 5 10 50 VCE - Collector to Emitter Voltage - V VCEO TYP. 100 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 150 IC = 1000*IB Pulse Test Ta = -25 C 75 C 25 C 125 C 10 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC PA1458 ss Di ip at io d n Li m i te d TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 3 2 1 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 20 10 0 25 50 75 100 125 Ta - Ambient Temperature - C 150 0 25 50 75 100 125 TC - Case Temperature - C DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 VCE (sat) - Collector Saturation Voltage - V VCE = 2.0 V Pulse Test 10 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT hFE - DC Current Gain 10000 1000 C 5 12 5 C = 7 C Ta 25 C 5 -2 1 100 10 0.01 0.1 1 IC - Collector Current - A 10 0.1 0.1 1 IC - Collector Current - A 3 PA1458 TRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - C/W 100 VCE 10 V VBE (sat) - Base Saturation Voltage - V 10 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 1000*IB Pulse Test 10 1 1.0 Ta = -25 C 25 C 75 C 125 C 0.1 0.1 1 10 PW - Pulse Width - ms 100 0.1 0.1 1 IC - Collector Current - A 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 5 2.0 1. 4 1.0 0.8 0.6 0.4 IC - Collector Current - A 4 3 2 IB = 0.2 mA 1 0 1 2 3 4 VCE - Collector to Emitter Voltage - V 5 4 PA1458 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 PA1458 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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